Download e-book for iPad: Semiconductors — Basic Data by Prof. Dr. Otfried Madelung (auth.), Prof. Dr. Otfried

By Prof. Dr. Otfried Madelung (auth.), Prof. Dr. Otfried Madelung (eds.)

ISBN-10: 3642976751

ISBN-13: 9783642976759

ISBN-10: 3642976778

ISBN-13: 9783642976773

The common use of popular severe facts handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded via the truth that in simple terms better libraries - frequently distant from the scientist's operating position - can have the funds for such helpful collections. to fulfill an pressing desire of many scientists operating within the box of semiconductor physics for having at their operating position a complete, prime quality, yet reasonable choice of at the very least the elemental facts in their box of curiosity this quantity includes an important info of semiconductors. All info have been compiled from details on semiconductors provided on greater than 6000 pages in quite a few volumes of the recent sequence of Landolt-Bomstein. we are hoping to fulfill the desires of the group of semiconductor physicists with this quantity, forming a bridge among the laboratory and extra details assets within the libraries. The Editor Marburg, January 1996 desk of contents A creation 1 normal feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 The corresponding Landolt-Bomstein volumes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 three actual amounts tabulated during this quantity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . three B actual info components of the IVth crew and IV-IV compounds 1. 1 Diamond (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . five 1. 2 Silicon (Si) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . eleven 1. three Germanium (Ge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 1. four gray tin (a-Sn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forty two 1. five Silicon carbide (SiC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forty seven 1. 6 Silicon germanium alloys (SixGel_x) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . fifty seven 2 III-V compounds 2. 1 Boron nitride (BN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2. 2 Boron phosphide (BP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sixty five 2. three Boron arsenide (BAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sixty eight 2. four Aluminium nitride (AIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sixty nine 2. five Aluminium phosphide (AlP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . seventy two 2. 6 Aluminium arsenide (AlAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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Solids 23 (1962) 225. : SOy. Phys. ) 4 (1962) 42. : SOY. Phys. ) 4 (1962) 1193. : 1. Electrochem. Soc. 109 (1962) 734. : SOY. Phys. ) 4 (1962) 196. , 1963. : 1. Phys. Chern. Solids 25 (1964) 873. : Phys. Rev. 134A (1964) 1058. : Ipn. 1. App!. Phys. 3 (1964) 369. Reuszer, 1. : Phys. Rev. 135 (1964) A1125. : 1. Phys. Chern. Solids 26 (1965) 1125. : Fiz. Tverd. Tela 7 (1965) 610; SOY. ) 7 (1965) 484. : Phys. Rev. 157 (1967) 615. : Z. Angew. Phys. 23 (1967) 369. : Fiz. Khim. Obrab. Mater. 5(1968) 150; Diffusion and Defect Data 3(1969) 142.

42 non-local pseudopotential calculation (see Fig. -_:L-_--=_ ___=_ ' -_ _ _b~ L A r tJ. K Err X k k Fig. I. (X-Sn. (a) Band structure calculated by a non-local pseudopotential method [76C], (b) comparison with data from angular resolved photoemission along the r - X axis [83H]. e) E(r 6cl E(r 8e) E(X 5 ,) E(X5J E(X 5e ) E(L6J E(L 6,) E(L6vl E(L 4 . 5J E(L 6e ) E(L 6e ) E(L 4 . 5cl Numerical value conductivity and Hall coefficient in the range 70···270 K, Fig. 5, - /\6e /\6, - /\6e at or near r 8v - r 6e r 8, - r 8e L4 .

Soc. 1983, p. 155. : 1. Appl. Phys. 54 (1983) 3612. : 1. Phys. C16 (1983) 6731. : Aggregation Phenomena of Point Defects in Si, Sirtl, E. ), The Electrochem Soc. 1983. p. 189. : 1. Appl. Phys. 54 (1983) 752. : Appl. Phys. Lett. 43 (1983) 485. : Phys. Rev. B28 (1983) 5943. : Phys. Rev. B27 (1983) 2605. C: Solid State Commun. 48 (1983) 995. : Appl. Phys. A30 (1983) I. : Silicon calculator 1983. : Solid State Commun. 44 (1984) 263. : Phys. Status Solidi (a) 86 (1984) K39. : Phys. Lett. A103 (1984) 137.

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Semiconductors — Basic Data by Prof. Dr. Otfried Madelung (auth.), Prof. Dr. Otfried Madelung (eds.)


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